Minimum Nominal Frequency at 25 Degrees Celsius (ºC) Temperature Set Point |
N/A 10 MHz |
Maximum Nominal Frequency at 25 Degrees Celsius (ºC) Temperature Set Point |
N/A 50 |
Typical Frequency Stability (±) at -40 to +85 Degrees Celsius (ºC) Temperature1 | N/A 2 ppm |
Maximum Frequency Versus Load at 10% Change (±) |
N/A 0.1 ppm |
Maximum Acceleration Sensitivity2 | N/A 0.07 ppb/g0.7 ppb/g |
Typical Electronic Frequency Control (±) |
N/A 7 ppm |
Maximum Warm-Up Time3 | N/A 10 ms |
Typical Frequency Stability (±) at -20 to +70 Degrees Celsius (ºC) Temperature |
N/A 1 ppm |
Maximum Frequency Versus Voltage for a 5 Percent (%) Change (±) |
N/A 1 ppm |
Maximum Aging Per Year After 14 Days Operation |
N/A ±1 ppm |
Typical Load at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 15 pF |
Minimum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 40 % |
Maximum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 60 % |
Typical Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 50 % |
Minimum Level at 15 Power Factor (pF) Load and 3.3 Volt (V) Voltage |
N/A +2.8 V "1" Level |
Maximum Level at 15 Power Factor (pF) Load and 3.3 Volt (V) Voltage |
N/A +0.2 V "1" Level |
Minimum Level at 15 Power Factor (pF) Load and 5 Volt (V) Voltage |
N/A +4.5 V "1" Level |
Maximum Level at 15 Power Factor (pF) Load and 5 Volt (V) Voltage |
N/A +0.2 V "1" Level |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset |
N/A -100 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset |
N/A -127 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset |
N/A -150 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset |
N/A -160 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset |
N/A -165 dBc/Hz |
Typical Phase Noise (Static) at 10 Megahertz (MHz) Nominal Frequency and Floor Frequency Offset |
N/A -168 dBc/Hz |
Minimum Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 3.0 V4.75 V |
Typical Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 3.3 V5.0 V |
Maximum Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 3.6 V5.25 V |
Maximum Supply Current |
N/A 30 mA |
Vibration |
N/A
Standard - MIL-STD-883 Method, Condition - 2007, Cond A Description - 50 g, 20 to 2,000 Hz, swept sine |
Shock |
N/A
Standard - MIL-STD-883 Method, Condition - 2002, Cond B Description - 1,500 g, 0.5 ms half-sine |
Terminal Finish |
N/A Electroless Nickel Immersion Gold (ENIG) std. SnPb 63/37 (non-RoHS) available |
Package Weight |
N/A 3 g |
Soldering Instruction |
N/A Reflow |
Shipping |
N/A Tray pack and Tape & Reel |
Operating Temperature |
N/A -40 to 85 ºC |
Storage Temperature |
N/A -45 to 90 ºC |
Marking |
N/A
Line 1: Greenray logo Line 2: Model Line 3: Frequency Line 4: Serial Number Line 5: Data code (YYWW) |
Applications |
N/A
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Features |
N/A
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