Brands |
N/A Greenray |
Frequency Range |
N/A 2.5 to 120 MHz |
Wide Temperature Range |
N/A -55 to +125 ºC |
Package Finish |
N/A Stainless Steel and Nickel-plated Kovar |
| Typical Frequency Stability (±) at -55 to +125 Degrees Celsius (ºC) Temperature1 | N/A 7 ppm |
Typical Frequency Stability (±) at -55 to +95 Degrees Celsius (ºC) Temperature |
N/A 5 ppm |
Typical Frequency Stability (±) at -40 to +85 Degrees Celsius (ºC) Temperature |
N/A 3 ppm |
Maximum Aging Tolerance (±) for 1 Year |
N/A 1 ppm |
Maximum Aging Tolerance (±) for 10 Years |
N/A 3 ppm |
| Maximum Acceleration Sensitivity2 | N/A 0.07 ppb/g0.7 ppb/g |
| Typical Voltage Control (±)3 | N/A 10 ppm |
Minimum Nominal Frequency at +25 Degrees Celsius (ºC) Temperature Set Point |
N/A 2.5 MHz |
Maximum Nominal Frequency at +25 Degrees Celsius (ºC) Temperature Set Point |
N/A 120 MHz |
Maximum Frequency Versus Voltage for a 2 Percent (%) Change (±) |
N/A 0.1 ppb/g |
Typical Frequency Stability (±) at 0 to +50 Degrees Celsius (ºC) Temperature |
N/A 0.3 ppm |
Typical Frequency Stability (±) at -20 to +50 Degrees Celsius (ºC) Temperature |
N/A 1 ppm |
Note for Expenditure Finance Committee (EFC) is Equal to Supply to 0, Negative Slope |
N/A EFC = Supply to 0, Negative slope |
Typical Short Term for a 1 Second Tau |
N/A 0.08 ppb |
Typical Load at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 15 pF |
Minimum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 40 % |
Maximum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 60 % |
Minimum Level (1) (+) at 3.3 Volts (V) Supply Voltage |
N/A 2.8 V |
Maximum Level (0) (+) at 3.3 Volts (V) Supply Voltage |
N/A 0.2 V |
Minimum Level (1) at 5.0 Volts (V) Supply Voltage |
N/A 4.5 V |
Maximum Level (0) at 5.0 Volts (V) Supply Voltage |
N/A 0.2 V |
Typical Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 50 % |
Typical Sinewave Load |
N/A 50 Ohms |
Typical Sinewave Output Power |
N/A 3.0 dBM |
Typical Sinewave Harmonics |
N/A -30 dBc |
Maximum Sinewave Harmonics |
N/A -26 dBc |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset |
N/A -90 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset |
N/A -120 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset |
N/A -140 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset |
N/A -150 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset |
N/A -155 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 1000000 Hertz (Hz) Frequency Offset |
N/A -160 dBc/Hz |
Direct Current (DC) Supply Voltage |
N/A 3.3 V5 V |
Minimum Direct Current (DC) Supply Voltage Drain to Drain (VDD) at ± 5% |
N/A 3.0 V4.75 V |
Typical Direct Current (DC) Supply Voltage Drain to Drain (VDD) at ± 5% |
N/A 3.3 V5.0 V |
Maximum Direct Current (DC) Supply Voltage Drain to Drain (VDD) at ± 5% |
N/A 3.6 V5.25 V |
Maximum Supply Current at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 35 mA |
Vibration |
N/A
Standard Per MIL-STD-883 Method, Condition 2007, Cond A Description 50 g, 20 to 2,000 Hz, swept sine |
Shock |
N/A
Standard Per MIL-STD-883 Method Condition 2002, Cond B Description 1,500 g, 0.5 ms half-sine |
Radiation |
N/A
Method TID Description 200 krad (Si) Method SEL, SET Description 100 MeV cm2/mg |
Terminal Finish |
N/A Lead Free SnPb |
Soldering Instruction |
N/A Hand Solder |
Shipping |
N/A Tray Pack |
Operating Temperature |
N/A -55 to +125 ºC |
Storage Temperature |
N/A -65 to +130 ºC |
Marking |
N/A
Line 1: Greenray logo Line 2: Model Line 3: Frequency Line 4: Serial Number + Data Code (YYWW) |
Maximum Package Weight |
N/A 15 g |
