Brands |
N/A Greenray |
Small and Rugged Package |
N/A 5.0 x 3.2 mm |
Wide Temperature Range |
N/A -55 to +125 ºC |
Tight Temperature Stability of (±) 1 ppm |
N/A -55 to +125 ºC |
Minimum Nominal Frequency at 25 Degrees Celsius (ºC) Temperature Set Point |
N/A 10 MHz |
Maximum Nominal Frequency at 25 Degrees Celsius (ºC) Temperature Set Point |
N/A 52 MHz |
| Typical Frequency Stability (±) at -45 to 105 Degrees Celsius (ºC) Temperature1 | N/A 0.5 ppm |
| Typical Frequency Stability (±) at -55 to +125 Degrees Celsius (ºC) Temperature2 | N/A 1.0 ppm |
Maximum Aging Tolerance (±) for 1 Year |
N/A 1.0 ppm |
Maximum Aging Tolerance (±) for 10 Years |
N/A 4.0 ppm |
| Typical Acceleration Sensitivity3 | N/A 0.2 x10-10/g0.4 x10-10/g |
| Maximum Acceleration Sensitivity4 | N/A 3 x10-10/g5 x10-10/g |
Maximum Frequency Versus Reflow after 24 Hour Recovery |
N/A 1.0 ppm |
Maximum Frequency Versus Voltage at ±5 Percent (%) |
N/A 0.2 ppm |
Maximum Frequency Versus Load Voltage at ±10 Percent (%) |
N/A 0.1 ppm |
| Typical Voltage Control (±)5 | N/A 8.0 ppm |
Typical Start-Up Time |
N/A 10 ms |
Maximum Start-Up Time |
N/A 16 ms |
Minimum Level at 3.3 Volt (V) Supply Voltage |
N/A 80 % "1" Level |
Maximum Level at 3.3 Volt (V) Supply Voltage |
N/A 20 % "0" Level |
Minimum Symmetry of Metal-Oxide-Semiconductor (CMOS) |
N/A 40 % |
Typical Symmetry of Metal-Oxide-Semiconductor (CMOS) |
N/A 50 % |
Maximum Symmetry of Metal-Oxide-Semiconductor (CMOS) |
N/A 60 % |
Typical Load at 10 Kiloohm (kO) Resistance |
N/A 10 pF |
Minimum Sub-Harmonics Voltage |
N/A 0.8 Vpp |
Typical Sub-Harmonics Voltage |
N/A 1.9 Vpp |
Maximum Sub-Harmonics Voltage |
N/A 3.0 Vpp |
Typical Load |
N/A 15 pF |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset |
N/A -80 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset |
N/A -112 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset |
N/A -133 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset |
N/A -145 dBc/Hz |
Typical Phase Noise at 20 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset |
N/A -149 dBc/Hz |
Typical Phase Noise (Static) at 20 Megahertz (MHz) Nominal Frequency and Floor Frequency Offset |
N/A -150 dBc/Hz |
Minimum Direct Current (DC) Supply Voltage |
N/A 3.0 V |
Typical Direct Current (DC) Supply Voltage |
N/A 3.3 V |
Maximum Direct Current (DC) Supply Voltage |
N/A 3.6 V |
Maximum Direct Current (DC) at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 6 mA |
Maximum Direct Current (DC) at Clipped Sinewave |
N/A 3 mA |
Vibration |
N/A
Standard MIL-STD-202G Method, Condition 204, C Description 20 g, 20 Hz to 2000 Hz, swept sine |
Shock |
N/A
Standard MIL-STD-202G Method, Condition 213, I, Description 100 g, 11 ms, half-sine |
Storage Temperature Range |
N/A -60 to 125 ºC |
Operating Temperature Range |
N/A -55 to 125 ºC |
Terminal Finish |
N/A ENIG STD., SnPb 63/37 (non-RoHS) available |
Package Weight |
N/A 3 g |
Soldering Instruction |
N/A Reflow |
Shipping |
N/A Tray Pack, Tape and Reel |
Benefits |
N/A A high performance reference source for timing applications that require low power draw, tight stability over a wide temperature range and a rugged, compact package. |
