Rugged DIP Package |
N/A 20.3 x 12.7 mm |
Direct Current (DC) Supply Voltage |
N/A 5 V |
Package Size |
N/A 17.3 mm² |
Frequency Range |
N/A 10 to 100 MHz |
Minimum Nominal Frequency at High Speed Complementary Metal-Oxide-Semiconductor (HCMOS) |
N/A 10 MHz |
Maximum Nominal Frequency at High Speed Complementary Metal-Oxide-Semiconductor (HCMOS) |
N/A 100 MHz |
Typical Frequency Stability (±) at 0 to +50 Degrees Celsius (ºC) Temperature |
N/A 5 ppm |
Typical Frequency Stability (±) at -20 to +70 Degrees Celsius (ºC) Temperature (N106) |
N/A 10 ppm |
Typical Frequency Stability (±) at -40 to +85 Degrees Celsius (ºC) Temperature |
N/A 15 ppm |
Note for Frequency Stability |
N/A Other Stability Available |
Maximum Aging Tolerance (±) for 1 Year |
N/A 1.0 ppm |
Maximum Aging (±) at 10 years (10 Megahertz (MHz)) |
N/A 3 ppm |
| Maximum Acceleration Sensitivity1 | N/A 2.5 ppb/g |
Note for Acceleration Sensitivity |
N/A Acceleration Sensitivity is worst axis tested at 90 Hz, 10 g |
Maximum Frequency Versus Voltage for a 5 Percent (%) Change (±) |
N/A 0.1 ppm |
Maximum Frequency Versus Load for a 10% Change (±) |
N/A 0.1 ppm |
Typical Electronic Frequency Control (EFC) (0 to Voltage Drain to Drain (VDD) - 0.5 Positive Slope) (±) |
N/A 10 ppm |
Minimum Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 4.75 V |
Typical Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 5.0 V |
Maximum Direct Current (DC) Supply Voltage Drain to Drain (VDD) |
N/A 5.25 V |
Maximum Supply Current at 10 Megahertz (MHz) Frequency |
N/A 15 mA |
Minimum Load at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 10 pF |
Typical Load at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 15 pF |
Minimum Level (1) 15 Power Factor (pF) Load, 5.0 Volts (V) |
N/A +4.5 V |
Maximum Level (0) 15 Power Factor (pF) Load, 5.0 Volts (V) |
N/A +0.2 V |
Minimum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 45 % |
Typical Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 50 % |
Maximum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) |
N/A 55 % |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset |
N/A -105 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset |
N/A -135 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset |
N/A -155 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset |
N/A -160 dBc/Hz |
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset |
N/A -162 dBc/Hz |
Random Vibration |
N/A
Standard MIL-STD-202 Method, Condition 214, Cond I-A Description 0.2 PSD, 5.35 rms G |
Sine Vibration |
N/A
Standard MIL-STD-202 Method, Condition 204, Cond D Description 20 g, 20 to 2,000 Hz |
Shock |
N/A
Standard MIL-STD-202 Method, Condition 213, Cond C Description 100 g, 6 ms half-sine |
Operating Temperature |
N/A -40 to +85 ºC |
Storage Temperature |
N/A -55 to +85 ºC |
Terminal Finish |
N/A Gold plating (RoHS) is standard (E). SnPb 63/37 also available |
Package Weight |
N/A 3 g |
Soldering Instruction |
N/A Hand |
Shipping |
N/A Tray |
Marking |
N/A
Line 1: Greenray logo + Model Line 2: Frequency Line 3: Serial Number + Data Code (YYWW) |