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Greenray Industries' Y1600 VCXO offers good phase noise performance in a compact, rugged package.

Greenray XOs are designed for communications, instrumentation and test equipment applications. Our XOs are available in a variety of packages, including SMT and low profile DIP.

Key examples of our XO and Voltage Controlled Clock Oscillator product lines follow. For detailed information, product Data Sheets (pdf file format) are provided.

Y1600 - XO
Low Phase Noise in a DIP package & RoHS compliant.
Low Phase Noise Low G-Sensitivity Oscillator
Unit of Measure
Items Low Phase Noise Low G-Sensitivity Oscillator
N623
Low Phase Noise Low G-Sensitivity Oscillator 		Compact Rugged Package Good Phase Noise Performance Oscillator
Y1600
Compact Rugged Package Good Phase Noise Performance Oscillator 		Low Phase Noise Ultra-Low G-Sensitivity Oscillator
Y1631
Low Phase Noise Ultra-Low G-Sensitivity Oscillator
Description N/A Greenray Industries' N623 VCXO offers ultra-low phase noise and low g-sensitivity performance in a compact, SMD package. N/A Greenray Industries' Y1600 XO offers good phase noise performance in a compact, rugged package N/A Greenray Industries' Y1631 XO offers good phase noise performance in a compact, rugged package
Rugged DIP Package N/A N/A 20.3 x 12.7 mm N/A 20.3 x 12.7 mm
Direct Current (DC) Supply Voltage N/A N/A 5 V N/A 5 V
Package Size N/A 17.3 mm²
Frequency Range N/A N/A 10 to 100 MHz N/A 60 to 130 MHz
Surface Mount Device (SMD) Package Width N/A 9.1 mm N/A N/A
Surface Mount Device (SMD) Package Length N/A 14.2 mm N/A N/A
Frequency (Other Frequencies and Options Available) N/A 100 MHz N/A N/A
Typical Nominal Frequency at 25 Degrees Celsius (ºC) Temperature Set Point N/A 100 MHz N/A N/A
Minimum Nominal Frequency at High Speed Complementary Metal-Oxide-Semiconductor (HCMOS) N/A N/A 10 MHz N/A
Maximum Nominal Frequency at High Speed Complementary Metal-Oxide-Semiconductor (HCMOS) N/A N/A 100 MHz N/A
Minimum Nominal Frequency at Sinewave N/A N/A N/A 60 MHz
Maximum Nominal Frequency at Sinewave N/A N/A N/A 130 MHz
Typical Frequency Stability (±) at -40 to +85 Degrees (ºC) Temperature Set Point N/A 15 ppm N/A N/A
Typical Frequency Stability (±) at 0 to +50 Degrees Celsius (ºC) Temperature N/A N/A 5 ppm N/A
Typical Frequency Stability (±) at -20 to +70 Degrees Celsius (ºC) Temperature (N106) N/A N/A 10 ppm N/A
Typical Frequency Stability (±) at -20 to +70 Degrees Celsius (ºC) Temperature N/A N/A N/A 15 ppm
Typical Frequency Stability (±) at -40 to +85 Degrees Celsius (ºC) Temperature N/A N/A 15 ppm N/A 20 ppm
Note for Frequency Stability N/A N/A Other Stability Available N/A Other Stability Available
Maximum Aging Tolerance (±) for 1 Year N/A 1.0 ppm
Maximum Aging (±) at 10 years (10 Megahertz (MHz)) N/A N/A 3 ppm N/A
Maximum Aging (±)at 10 years (100 Megahertz (MHz)) N/A N/A N/A 3 ppm
Maximum Acceleration Sensitivity1 N/A N/A 2.5 ppb/g N/A
Maximum Acceleration Sensitivity (SD) N/A N/A N/A 2.0 ppb/g
Maximum Acceleration Sensitivity (LG) N/A N/A N/A 0.5 ppb/g
Maximum Acceleration Sensitivity (ULG) N/A N/A N/A 0.09 ppb/g
Note for Acceleration Sensitivity N/A N/A Acceleration Sensitivity is worst axis tested at 90 Hz, 10 g N/A Acceleration Sensitivity is worst axis tested at 90 Hz, 10 g
Maximum Frequency Versus Voltage for a 5 Percent (%) Change (±) N/A N/A 0.1 ppm N/A 0.1 ppm
Maximum Frequency Versus Load for a 10% Change (±) N/A N/A 0.1 ppm N/A 0.1 ppm
Typical Electronic Frequency Control (EFC) (0 to Voltage Drain to Drain (VDD) - 0.5 Positive Slope) (±) N/A 30 ppm N/A 10 ppm N/A
Typical Electronic Frequency Control (EFC) (0.5 to Voltage Drain to Drain (VDD) - 0.5 Positive Slope) (±) N/A N/A N/A 10 ppm
Maximum Electronic Frequency Control (EFC) Linearity (0.5 to Voltage Drain to Drain (VDD) - 0.5) N/A 10 % N/A N/A
Minimum Absolute Pull Range at All Condition 7 Years N/A -10 ppm N/A N/A
Maximum Absolute Pull Range at All Condition 7 Years N/A 10 ppm N/A N/A
Typical Frequency Versus Voltage (±) at ± 0.25 Voltage (V) N/A 1 ppm N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset N/A -85 dBc/Hz N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset N/A -115 dBc/Hz N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset N/A -140 dBc/Hz N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset N/A -162 dBc/Hz N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset N/A -173 dBc/Hz N/A N/A
Typical Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 1000000 Hertz (Hz) Frequency Offset N/A -175 dBc/Hz N/A N/A
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset N/A N/A -105 dBc/Hz N/A -83 dBc/Hz
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset N/A N/A -135 dBc/Hz N/A -120 dBc/Hz
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset N/A N/A -155 dBc/Hz N/A -149 dBc/Hz
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset N/A N/A -160 dBc/Hz N/A -160 dBc/Hz
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset N/A N/A -162 dBc/Hz N/A -167 dBc/Hz
Typical Phase Noise at 10 Megahertz (MHz) Static Nominal Frequency and 1000000 Hertz (Hz) Frequency Offset N/A N/A N/A -170 dBc/Hz
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 10 Hertz (Hz) Frequency Offset N/A -80 dBc/Hz N/A N/A
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 100 Hertz (Hz) Frequency Offset N/A -110 dBc/Hz N/A N/A
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 1000 Hertz (Hz) Frequency Offset N/A -135 dBc/Hz N/A N/A
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 10000 Hertz (Hz) Frequency Offset N/A -158 dBc/Hz N/A N/A
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 100000 Hertz (Hz) Frequency Offset N/A -170 dBc/Hz N/A N/A
Maximum Phase Noise at 100 Megahertz (MHz) Static Nominal Frequency and 1000000 Hertz (Hz) Frequency Offset N/A -173 dBc/Hz N/A N/A
Minimum Direct Current (DC) Supply Voltage Drain to Drain (VDD) N/A 4.75 V
Typical Direct Current (DC) Supply Voltage Drain to Drain (VDD) N/A 5.0 V
Maximum Direct Current (DC) Supply Voltage Drain to Drain (VDD) N/A 5.25 V
Typical Supply Current at 100 Megahertz (MHz) Frequency N/A 30 mA N/A N/A
Maximum Supply Current at 100 Megahertz (MHz) Frequency N/A 50 mA N/A N/A
Maximum Supply Current at 10 Megahertz (MHz) Frequency N/A N/A 15 mA N/A
Typical Load N/A 50 Ohms N/A N/A 50 Ohms
Minimum Load at Complementary Metal-Oxide-Semiconductor (CMOS) N/A N/A 10 pF N/A
Typical Load at Complementary Metal-Oxide-Semiconductor (CMOS) N/A N/A 15 pF N/A
Minimum Level 50 O Load N/A N/A N/A 10 dBM
Minimum Power Level at 25 Degrees Celsius (ºC) Temperature N/A +9.5 dBM N/A N/A
Typical Power Level at 25 Degrees Celsius (ºC) Temperature N/A +12 dBM N/A N/A
Maximum Power Level at 25 Degrees Celsius (ºC) Temperature N/A +14.5 dBM N/A N/A
Minimum Level (1) 15 Power Factor (pF) Load, 5.0 Volts (V) N/A N/A +4.5 V N/A
Maximum Level (0) 15 Power Factor (pF) Load, 5.0 Volts (V) N/A N/A +0.2 V N/A
Minimum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) N/A N/A 45 % N/A
Typical Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) N/A N/A 50 % N/A
Maximum Symmetry at Complementary Metal-Oxide-Semiconductor (CMOS) N/A N/A 55 % N/A
Maximum Supply Current N/A N/A N/A 30 mA
Maximum Harmonics N/A -30 dBc N/A N/A -45 dBc
Maximum Spurious N/A N/A N/A -90 dBc
Random Vibration N/A N/A Standard
MIL-STD-202

Method, Condition
214, Cond I-A

Description
0.2 PSD, 5.35 rms G 		N/A Standard
MIL-STD-202

Method, Condition
214, Cond I-A

Description
0.3 PSD, 20.7 G rms
Vibration N/A Standard
MIL-STD-202

Method, Condition
Method 204, Condition Cond A

Description
10 g peak, 10 and 500 Hz 		N/A N/A
Sine Vibration N/A N/A Standard
MIL-STD-202

Method, Condition
204, Cond D

Description
20 g, 20 to 2,000 Hz 		N/A
Shock N/A Standard
MIL-STD-202

Method, Condition
Method 213, Condition Cond C

Description
100 g, 6 ms half-sine, 12.3 ft/sec 		N/A Standard
MIL-STD-202

Method, Condition
213, Cond C

Description
100 g, 6 ms half-sine 		N/A Standard
MIL-STD-202

Method, Condition
213, Cond C

Description
30 g, 11 ms, sawtooth
Operating Temperature N/A -40 to +85 ºC
Storage Temperature N/A -45 to +95 ºC N/A -55 to +85 ºC N/A -55 to +85 ºC
Terminal Finish N/A Gold plating (RoHS) is standard (E). SnPb 63/37 also available
Package Weight N/A 3 g N/A 3 g N/A <3 g
Soldering Instruction N/A Reflow Solder N/A Hand N/A Hand Reflow Soldering
Shipping N/A Tray N/A Tray N/A Tray Pack
Marking N/A Line 1: Greenray logo + Model

Line 2: Frequency

Line 3: Serial number + Data code (YYWW) 		N/A Line 1: Greenray logo + Model
Line 2: Frequency
Line 3: Serial Number + Data Code (YYWW) 		N/A Line 1: Greenray logo
Line 2: Model
Line 3: Frequency
Line 4: Serial Number + Data Code (YYWW)
Line 5: Lot Number
Applications N/A
  • Telecommunications
  • High-shock electronics
  • Mobile radio
  • Mobile instrumentation
  • Airborne communications
  • Wireless communications
  • Microwave receivers
 		N/A
  • Telecommunications
  • High-shock electronics
  • Mobile radio
  • Mobile instrumentation
  • Airborne communications
  • Wireless communications
  • Microwave receivers
 		N/A
  • Telecommunications
  • Mobile radio
  • Mobile instrumentation
  • Airborne communication
  • Wireless communication
  • Microwave receiver
Features N/A
  • Sine Wave output
  • RoHS compliant
 		N/A
  • HCMOS output
  • MIL Screening to MIL-PRF-55310 available
  • Random Vibration per MIL-STD-202, Method 214
  • Shock perMIL-STD-202, Method 213
  • RoHS compliant
 		N/A
  • Sinewave output
  • RoHS compliant
  • 1 Worst axis tested at 90 Hz, 10 g